ION IMPLANTER Russian patent published in 1998 - IPC

FIELD: devices generating intensive ion beams; implantation metallurgy. SUBSTANCE: outputs of anode power system and high-voltage control rectifier are provided with integrating units whose ratio of time constants is between 2 and 4 depending on distance between ion source and high-voltage electrode and on diameter of high-voltage electrode found from equation n = ta/ tB = 3,16(1•L/ d•D)•0,83, where n is ratio of time constant of integrating unit of anode power system to that of high-voltage control rectifier; ta is time constant of integrating unit of anode power system; tb is time constant of integrating unit of high-voltage control rectifier; I is distance between anode center and boundary of plasma extraction from ion source; L is distance between ion source and high-voltage electrode; d is diameter of hole at boundary of plasma extraction from ion source; D is diameter of high- voltage electrode. EFFECT: improved depth of ion implantation into surface being irradiated at stationary ion beam. 3 dwg