METHOD OF ION IMPLANTATION Russian patent published in 1994 - IPC

FIELD: metal science. SUBSTANCE: low-current vacuum-arc discharge is initiated with supply of pulse voltage to cathode gap. By supply of voltage between anode and collector extraction and acceleration of plasma ions of arc discharge is conducted and target is irradiated. By dependence of average charge of each kind of ions of beam on value of current arc discharge current is set depending on ratio of mass and ordinal numbers of ions of atom beam of target so that average projection ranges of ions of different kinds in target coincide. In process of two-element implantation to obtain impurity distribution profiles coinciding in depth it is necessary to ensure coincidence of maxima of resulting distribution profiles. Coincidence of average ranges of ions of C and Ti in irradiated material and coincidence of distribution profiles of impurities C and Ti makes it possible to substantially increase content of TiC in doped region which will have good mechanical properties. Increased percentage of titanium carbide in sample leads to enhanced quality of treatment of material. EFFECT: enhanced quality of treatment by formation of impurity distribution profiles coinciding in depth. 3 dwg