THERMAL JUNCTION MANUFACTURING METHOD Russian patent published in 1996 - IPC

FIELD: semiconductor engineering; production of thermoelectric generators and refrigerators, semiconductor devices for electronic and radio engineering industries. SUBSTANCE: method involves formation of heat-conducting insulating layer by producing flexible adhesive material with dispersed filler of three fractions, mc: 2-3; 10-20; 30-150, in which depressions between large fractions are filled with smaller ones, placing this material between heat-transfer surfaces, compressing heat-transfer surfaces, and holding them so until fully stuck together; while preparing heat-conducting insulating layer, filler is introduced in adhesive material untol filler particles come in contact with adhesive material placed between filler fragments only; used as filler is powder of synthetic diamond dielectric monocrystals. EFFECT: reduced thermal resistance, improved dielectric properties of thermal junction.