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1 665 732

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(51)

IPC

(21) (22)

Application

3101025/26, 1984-11-19

(22)

Actual filing date

1984-11-19

(45)

Published

1995-09-10

(72)

Inventor

Gerken V.A.Kuratev I.I.Kalashnikova I.I.Shestakov A.V.Sil'Nitskaja G.B.Kolomina I.V.Mikheev V.E.Bol'Shakov S.A.Baryshev S.A.Janchuk V.G.

METHOD FOR GROWING SINGLE CRYSTALS OF GADOLINIUM-SCANDIUM-GALLIUM GARNET Russian patent published in 1995 - IPC

Abstract SU 1665732 A1

FIELD: materials of quantum electronics. SUBSTANCE: a seed of gadolinium-scandium gallium garnet extended in direction112} and made in the form of a cylinder or a rectangular parallelepiped with side surfaces corresponding to crystallographic surfaces and is grown from melt into a single crystal by the Chokhralsky method. EFFECT: higher efficiency. 1 tbl

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SU 1 665 732 A1

Authors

Gerken V.A.

Kuratev I.I.

Kalashnikova I.I.

Shestakov A.V.

Sil'Nitskaja G.B.

Kolomina I.V.

Mikheev V.E.

Bol'Shakov S.A.

Baryshev S.A.

Janchuk V.G.

Dates

1995-09-10—Published

1984-11-19—Filed