FIELD: electronics; laser and nuclear technology; optics; aircraft construction or jewellery.
SUBSTANCE: single-crystal sapphire seed (1) is a single-crystal sapphire plate (2) bounded by two spaced apart flat parallel faces (4), and has a rhombohedral crystal structure with crystallographic axes [A], [C] and [ M], respectively perpendicular to the crystallographic planes A (11-20), C (0001) and M (10-10). The mentioned plate (2) was obtained from the initial sapphire single crystal, cut so that one of the axes [A], [C], or [M] forms an angle (α) from 5 to 85° with the normal (D1) to the flat faces (4). According to another embodiment, the single-crystal sapphire seed (1) can be a sapphire bar obtained from the initial sapphire single crystal, cut in such a way that one of the crystallographic axes [A], [C] or [M] forms an angle from 5 to 85° with the normal to its cross section. Pure or alloyed alumina and/or sapphire or sapphire trimmings are melted in a crucible. The melt is brought into contact with the above single crystal sapphire seed (1) to crystallize according to the direction of growth. A single crystal is grown in one of the following ways: Stepanov, heat exchange, Kyropoulos, Czochralski, vertical or horizontal Bridgman or microdrawing. To manufacture a single-crystal sapphire cylinder, the core of a single-crystal sapphire ball grown in this way is drilled using a cutting tool. From the resulting sapphire single crystal, external parts or functional components for watchmaking or jewellery can be cut, such as bridges, plates, watch cases and dials or bracelet links. From the resulting single crystal, it is also possible to produce a watch glass blank, limited by two faces located at a distance from each other, at least one of which is flat, and the crystallographic axis [C] of the single crystal does not lie in the flat face of the specified blank.
EFFECT: invention makes it possible to obtain less defective sapphire single crystals, which are easier to machine.
15 cl, 9 dwg
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Authors
Dates
2023-08-30—Published
2022-09-29—Filed