FIELD: optical electronics materials. SUBSTANCE: invention provides preparation of novel yttrium- and aluminum-based double oxide as promising material for optoelectronics. In particular, this oxide, after activation with Cr(III) and Ln(III) [more specifically Nd(III), Yb(III)] ions, can be used as laser material. Oxide depicted by empirical formula Y2(Be0.5B0.5)2AlO7, crystallizes in the structure of melilite family, which provides possibility of industrial-scale production of these crystals. 15 mm-sized crystals with length 30 mm characterized by good optical quality were grown on growth installation "Kristall-3" under following conditions: growth atmosphere: nitrogen/oxygen 98/2 v/v; iridium melting-pot 40x2x40 mm; melt surface temperature ca. 1650 C; seed: iridium rod; crystal drawing velocity 1.5-3 mm/h; rod rotation speed 10 rpm; heat insulation of growth chamber id provided by alumina and zirconium oxide ceramics. EFFECT: extended choice of high-quality laser crystals.
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Authors
Dates
2002-04-10—Published
2000-06-29—Filed