WAY OF REALISATION OF STRUCTURE OF MULTILAYERED PHOTO-ELECTRIC CONVERTER Russian patent published in 2009 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method of making a multilayer structure of the two-junction photo-electric converter, including consecutive sedimentation of back potential barrier from trimethyl gallium (TMGa) from gas phase on a substrate of r-type GaAs, trimethyl aluminium (TMAl), arsine (AsH₃) and a source of an r-admixture, base from TMGa and AsH₃ and a source of an r-admixture, an emitter from TMGa and AsH₃ and a n-admixture source, large-gap window after temperature increase to value of temperature of the subsequent layer from TMGa, TMAI and AsH₃ and a source of a n-admixture with formation bottom p-n transition at a molar ratio of sources of element atoms of the fifth and third group 60-75, a layer of n⁺⁺-GaAs from TMGa, AsH₃ and a source of a n-admixture which is performed without interruption of component supply in a gas phase on heteroborder AlGaAs/GaAs; layer of p⁺⁺-AlGaAs from TMGa, AsH₃ with Esaki diode formation at a molar ratio of sources of element atoms of the fifth and third group 1-5, back potential barrier from TMGa, trimethyl indium (TMIn), phosphine (PH₃) and a source of a r-admixture, base from TMGa, TMIn, PH₃ and a source of a r-impurity, the emitter from TMGa, TMIn, PH₃ and a source of a n-admixture, a layer of a large-gap window from TMAI, TMIn, PH₃ and a source of a n-admixture with formation of top p-n transition and an epitaxial contact layer from TMGa, AsH₃ and a n-admixture source.

EFFECT: invention provides reception of structure of the two-junction photo-electric converter which is ensuring functioning of the solar cell created on the basis of given structure in a wide band of concentration of a solar energy, reduction in price of processing technique of cultivation of structure and improvement of photoluminescent properties of the epilayers which are a part of multitransitive structure that can increase structure physical parametres.

6 cl, 3 ex, 2 tbl, 12 dwg