PROCESS OF MANUFACTURE OF EPITAXIAL STRUCTURE CONTAINING LAYERS OF INDIUM PHOSPHIDE AND ARSENIDE-INDIUM PHOSPHIDE IN AS OOX P OO1-OOX Russian patent published in 1995 - IPC

Abstract RU 2032960 C1

FIELD: manufacture of semiconductors. SUBSTANCE: process allows technology of growth of structures with "stop-layers" to be simplified. Prior to growth of working structure flux of arsenic trichloride with mole share 1,9·10^-3-5,3·10^-3 is additionally injected into steam-gas mixture and "stop-layer" is grown in the course of 4-10 min. EFFECT: facilitated manufacture. 2 dwg, 1 tbl

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RU 2 032 960 C1

Authors

Lukash V.S.

Tarzimjanov A.N.

Zorkal'Tseva N.N.

Sapunova G.V.

Bakin N.N.

Dates

1995-04-10—Published

1990-05-07—Filed