METHOD OF MAKING GAAS-BASED PHOTOCELL Russian patent published in 2017 - IPC H01L31/18 

FIELD: chemistry.

SUBSTANCE: method of making photoelectric converter based on GaAs involves growing by liquid-phase epitaxy on n-GaAs substrate a base layer of n-GaAs doped with tin or tellurium, with thickness of 10–20 mcm and a layer of p-Al_xGa_1-xAs, doped with zinc, for x = 0.2–0.3 at beginning of growth and x = 0.10–0.15 in surface region of layer, wherein layer of p-AlGaAs is grown carried at temperature 600–730 °C for 20–50 minutes, during this period method includes formation of diffusion p-n junction in GaAs with formation of an emitter layer of p-GaAs with thickness of 1–2 mcm, deposition of back contact by thermal vacuum sputtering, annealing deposited back contact in a hydrogen atmosphere, deposition through a photoresist mask of a front contact by thermal vacuum sputtering and annealing deposited front contact in a hydrogen atmosphere, metallization of front contact by galvanic deposition through a photoresist mask with simultaneous deposition of gold on rear surface, separating etching structure through photoresist mask into separate photocells and application of antireflection coating.

EFFECT: invention enables to make photo converters with increased efficiency of conversion of narrow-band, in particular, laser radiation, and can be used in mass production of GaAs photocells.

3 cl, 2 dwg, 2 ex