TWO-BAND MULTIPLE-BEAM AMPLIFIER KLYSTRON Russian patent published in 1995 - IPC

FIELD: microwave devices. SUBSTANCE: two communication holes 4 are made in common wall of active and passive cavities between transit-time channels and two resonance-tuned frequencies corresponding to lowest-order modes of passive cavities 1 are equal to two resonance-tuned frequency of active cavity 2; one of working frequencies of active cavity corresponds to cophasal excitation of communication slits and other working frequency corresponds to counter-phasal excitation of communication slits and on active cavity side they comply with equation given in description of invention. EFFECT: improved efficiency. 5 dwg