PROCESS OF ETCHING OF HIGH-TEMPERATURE SUPERCONDUCTING FILMS Y-Ba-Cu-O Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: surface of sample is exposed to action of active particles-clusters HCL and H₂O which are produced by mixing of initial gases: vapors of water and hydrogen chloride with their successive feed into vacuum chamber. First vapors of water are injected to partial pressure in chamber equal to 0.5-0.7 of saturated pressure within temperature range 17-25 C with proportion of initial gases within limits where P_HCl is partial pressure of hydrogen chloride. Positive effect process of etching is carried out in one stage, homogeneity of etching is limited by homogeneity of application of films and superconducting properties of unetched regions are maintained. With and temperature T=23 C etching speed 340 nm/min is achieved. EFFECT: increased etching speed, improved homogeneity of application of films. 5 dwg, 2 tbl