FORMATION OF METAL-OXIDE FILMS OF HIGH-TEMPERATURE SUPERCONDUCTORS Russian patent published in 1994 - IPC

FIELD: film electronics technology. SUBSTANCE: desired structure of film, its high homogeneity, and stoichiometry are attained due to proper selection of target evaporation conditions, such as power density of laser radiation, repetition rate of laser pulses, and oxygen temperature, substrate temperature in the course of film deposition in the range of 853 to 1023 K, and also two-stage cooling of substrate with film upon deposition. Conditions affording desired results during film cooling are as follows: film cooling rate at different stages, oxygen pressure, also different at different stages, and stage-to-stage temperature boundary of 773 K. Target-to-substrate distance selected between 1.5 and 3 cm also contributes to film quality improvement. EFFECT: improved quality of film due to its reduced roughness and improved homogeneity of structure, facilitated manufacture. 3 cl