METHOD OF OBTAINING EPITAXIAL FILMS Russian patent published in 1995 - IPC

Abstract RU 2046837 C1

FIELD: microelectronics technique. SUBSTANCE: method of obtaining epitaxial films of metals, dielectric and ceramic by magnetron or ion-plasma high-frequency spraying of a material of a target with an electric bias on the substrate comprises steps of applying to the substrate the high-frequency bias with the same frequency as to the target and with amplitude of the bias, equal to 10-150 V, at a shift between the target and the substrate, equal to 0-180 degrees. EFFECT: enhanced quality of films. 1 cl, 4 dwg

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RU 2 046 837 C1

Authors

Bochkarev V.F.

Gorjachev A.A.

Naumov V.V.

Dates

1995-10-27Published

1992-12-16Filed