DEVICE FOR PLASMA PROCESSING OF SEMICONDUCTOR PLATE UNDERSIDE WITH FACE SIDE PROTECTED Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: etching device is provided with gas discharge excitation system in the form of parallel electrodes with projecting central whose diameter corresponds to size of plate being processed or is 5% greater than that; height of projecting central part is not less than distance between electrodes. Substrate holder is spaced at distance d from projecting central part of top electrode determined from relationship: d is greater than d_o or smaller than {d_o+[(C+ln d₁)/P]M}, where G = ln[A/1/γ+1)]; M = l/A ln(1/γ+1); d_o is thickness of plate being processed, cm; d₁ is distance between plate and bottom electrode, cm; A is firing potential constant for particular gas, cm^-1·torr; gamma is secondary emission coefficient for particular gas and electrode material; P= 10 torr; 1 2.72. Top electrode serves as cover and bottom electrode, as discharge chamber bottom; working gas admission system is essentially pipe connection mounted in center of top electrode above substrate holder; discharge system is pipe connection mounted in center of bottom electrode. EFFECT: improved design. 1 dwg