FIELD: semiconductor power electronics; unipolar transistors whose filed effect is afforded by insulated gate. SUBSTANCE: organized in drain diffused zone of planar power MOS transistor is Schottky barrier zone whose area is much smaller by at least ten times than drain diffused zone so that relatively high output capacitance of drain is suppressed by low capacitance of Schottky barrier. EFFECT: reduced output capacitance of transistor. 1 cl, 4 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD FOR MANUFACTURING PLANAR MOS POWER TRANSISTOR | 2002 |
|
RU2239912C2 |
HIGH-POWER DMOS-TRANSISTOR MANUFACTURING PROCESS | 2000 |
|
RU2189089C2 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | 2013 |
|
RU2531122C1 |
DEVICE FOR PROTECTION AGAINST STATIC ELECTRICITY DISCHARGES OF POWER LEADS OF COMPLEMENTARY MOS (METAL-OXIDE-SEMICONDUCTOR) INTEGRATED CIRCUITS ON SILICON WAFERS WITH N-TYPE CONDUCTIVITY | 2013 |
|
RU2585882C2 |
INTEGRATED-CIRCUIT AND-OR-NOT GATE | 2000 |
|
RU2166837C1 |
METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE | 2010 |
|
RU2431905C1 |
HIGH VOLTAGE BIPOLAR TRANSISTOR WITH STATIC INDUCTION | 2023 |
|
RU2805777C1 |
THREE-DIMENSIONAL NEUROSTRUCTURE | 1999 |
|
RU2173006C2 |
SEMICONDUCTOR KEY DEVICE WITH FIELD CONTROL | 2001 |
|
RU2199795C2 |
MANUFACTURING METHOD OF SHF POWERFUL FIELD LDMOS TRANSISTORS | 2008 |
|
RU2364984C1 |
Authors
Dates
2004-05-27—Published
2002-10-16—Filed