FIELD: electric engineering.
SUBSTANCE: in known method for manufacturing device for protection from overload currents, made on basis of semiconductor crystals with low melting point strap, bridging its transition, electric current is let through semiconductor crystal in direct or reverse direction, amplitude and passage duration of which are enough for irreversible rupture of p-n transition and melting through of crystal body with a strap of electrode alloy, realizing functions of low melting point insert of device.
EFFECT: simplified manufacture.
1 dwg
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