FIELD: electrical engineering.
SUBSTANCE: invention relates to the method of controlling the transistor operating in the conditions accompanied with an irreversible structure transformation. The invention allows reducing the power required for irreversible break-down of the emitter-collector section. To this end, the reverse polarity pulse if sent to the emitter-base electrodes, the pulse amplitude being selected sufficient for the transistor break down.
EFFECT: lower power required for the irreversible break-down of the emitter-collector section.
3 dwg
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