FIELD: electronic engineering; fabrication of semiconductor photoelectric generators.
SUBSTANCE: proposed method for fabricating photoelectric generator includes formation of p-n structures on semiconductor substrate, metal deposition, cutting of blank into matrices, their covering with clearing coat, and connection of current leads; multilayer n-p structure is formed by way of epitaxial growth of n and p layers on semiconductor substrate; prior to connection of current leads pulse voltage is applied to matrices and reverse-biased p-n junctions are broken down.
EFFECT: enhanced output voltage and power, well productivity, and manufacturability of generator.
1 cl, 6 dwg
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