ASSOCIATIVE MEMORY GATE Russian patent published in 1994 - IPC

Abstract RU 2006964 C1

FIELD: microelectronics. SUBSTANCE: memory gate has thyristor, load register and field- effect transistor for recording. Two transistors for reading are introduced to accomplish the goal of invention. Associative memory gate provide retrieval of information according to given criterion while number of elements is halved. EFFECT: simplified design. 1 dwg

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RU 2 006 964 C1

Authors

Aristov A.E.

Zimoglad V.A.

Rakitin V.V.

Dates

1994-01-30—Published

1991-07-05—Filed