FAT-BASED GAS-SENSITIVE DETECTOR Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: detector has silicon substrate with source and drain areas. There is a layer of thin dielectric between the areas. Gate is disposed onto the layer. Holes are made into thick dielectric layer for making contacts with source and drain areas. There is a polysilicon film onto the thin dielectric layer between gate and thick dielectric layer. Silicon dioxide layer is deposited onto the thin dielectric layer. The film is made in form of a loop or a frame. Width of the film does not excess distance of boundary of the thick dielectric layer to boundary of spatial charge area of drain and source. The gate is made of catalytically active metal. EFFECT: improved reliability of operation. 2 dwg