INTEGRATED CIRCUIT WITH TWO TYPES OF TRANSISTORS Russian patent published in 1997 - IPC

FIELD: semiconductor engineering, microelectronics and nanoelectronics. SUBSTANCE: integrated circuit has substrate partially coated with mask layer in the form of local regions separated by gaps of definite width which are stretched along relatively perpendicular directions to form single-coupling region. All integrated-circuit components are formed in substrate portion not covered with mask layer, in gaps between mask regions. The latter remain available conductors. EFFECT: provision for independent formation of two relatively perpendicular conductor layers by selecting mask thickness greater than conductor width. 3 cl, 2 dwg