STORAGE CELL FOR DYNAMIC MAIN STORAGE Russian patent published in 1995 - IPC

Abstract RU 2029995 C1

FIELD: computer engineering. SUBSTANCE: storage cell for dynamic main storage has semiconductor substrate with first and second regions 2 and 3 of polarity opposing that of substrate and first conducting electrode 4 between them isolated from substrate by insulating layer 5; third region 6 of same polarity as substrate is formed inside second region; fourth region 7 of polarity opposing that of substrate is formed inside third region; part of second region surface between third region and substrate is covered with insulating layer 8 on which second conducting electrode 9 is formed. EFFECT: improved degree of storage integration. 2 dwg

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RU 2 029 995 C1

Authors

Rakitin V.V.

Serebrennikov A.V.

Tishin Ju.I.

Dates

1995-02-27—Published

1991-02-05—Filed