METHOD OF MANUFACTURE OF INTEGRATED CIRCUITS BASED ON MOSFET TRANSISTORS Russian patent published in 1997 - IPC

FIELD: electronic engineering. SUBSTANCE: in method of manufacture of mosfet integrated circuits with mutually perpendicular direction of gates of complementary transistors positioned in windows, in masking layer on plate surface which includes application , removal and modification of layers by directed beams in the above-indicated windows, masking layer is also removed at places of location of conductors. Then protective layer is applied which is at first removed at places subjected to irradiation by beams along first direction at angles of <$E+->A to normal, to plate where transistor of first type of conductivity are formed. This done, protective layer is removed at places exposed to irradiation by beams along second direction at the same angles where transistors of second type of conductivity are formed. First conducting layer is formed at places subjected to irradiation along first direction at angles of <$E+->B to normal. Interlayer insulation is formed at places accessible to irradiation along both directions at angles of <$E+->B. Second conducting layer is formed at places subjected to irradiation at angles of <$E+->B along second direction. Angles A and B are selected from correlation $$$, where W is width of conductor, gate busbar, and of drain and source region S; H is masking coating height. EFFECT: more effective manufacturing process. 3 dwg