FIELD: microelectronics. SUBSTANCE: source, drain and electrode of gate of field-effect Schottky transistor are manufactured on δ-doped structure which includes semi-insulated backing of gallium arsenide and d-doped layer of n type conductance separated from backing and free surface with layers of gallium arsenide. Layer of gallium arsenide of p type conductance doped to degeneration and having common boundary with electrode of gate is located between electrode of gate and d-doped layer. EFFECT: facilitated manufacture, improved operational characteristics of transistor. 1 dwg
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