FIELD: nuclear radiation recording procedures. SUBSTANCE: invention is based on detected close connection between admixture drift speed in semiconductors and change in degree of material compensation occurring in the process as well as on detected effect of automatic cleaning of slowly diffused admixture profile from impurities of higher speed displacing in semiconductor according to mechanism of drift in electric field. As a result, structures with small and time-stable contact are created on materials compensated by high-rate admixtures. EFFECT: improved sensitivity due to improved peak-valley ratio. 2 cl, 1 dwg
