SEMICONDUCTOR DEVICE Russian patent published in 1995 - IPC

Abstract RU 2045111 C1

FIELD: semiconductor technology. SUBSTANCE: in semiconductor device high conductive sections are regularly formed inside base layer at depth not less than width of region of bulk charge of emitter junction with thickness not exceeding difference between distance from surface of sections facing emitter junction to collector junction and width of its region of bulk charge. EFFECT: expanded application field. 2 cl, 2 dwg

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RU 2 045 111 C1

Authors

Grekhov I.V.

Kostina L.S.

Beljakova E.I.

Dates

1995-09-27—Published

1992-01-08—Filed