TRANSISTOR Russian patent published in 1996 - IPC

FIELD: integrated microelectronics; superhigh-speed transistors. SUBSTANCE: transistor has semiconductor collector, metallic-conductivity base, and emitter built up of conducting material and additional tunnel-thin insulating layer of thickness meeting equation D≥E_i/qE_br, where E_i is ionizing energy of collector material, J; E_br is field intensity at insulation breakdown, V/m; q is electron charge, C. Additional layer of tunnel-thin insulation abuts base; metal or polysilicon with dope concentration of 10²⁰-10²¹cm^-3 is used as conducting material and silicon oxide, as tunnel-thin insulation. EFFECT: improved design. 2 cl, 2 dwg