PROCESS OF MANUFACTURE OF SEMICONDUCTOR STRUCTURES BASED ON COMPOUNDS A B BY METHOD OF LIQUID-PHASE EPITAXY Russian patent published in 1995 - IPC

Abstract RU 2031477 C1

FIELD: manufacture of semiconductor devices. SUBSTANCE: compounds type A^IIBV2

or AI3

^IBV2

are used as dopants for growing layer of p type conductance and AI2

^IIBV3

^I for growing layer of n type conductance. In this case composition of liquid phase is formed with allowance for weight of dopants as well as elements A^III and B^V included in above-mentioned compounds. EFFECT: facilitated manufacture of semiconductor structures. 2 tbl

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RU 2 031 477 C1

Authors

Arsent'Ev I.N.

Vavilova L.S.

Dates

1995-03-20—Published

1992-07-09—Filed