PROCESS OF NEUTRON-TRANSMUTATIONAL DOPING OF SILICON Russian patent published in 1994 - IPC

FIELD: manufacture of semiconductor materials. SUBSTANCE: process of neutron-transmutational doping of silicon includes reciprocating movement of containers with silicon ingots through radiation zone in channel of reactor and test of average fluency of neutrons over length of ingots till they acquire needed fluency. Not less than two containers are moved simultaneously. At least one container should be present within radiation zone when direction of their movement changes. In multiple movement at moment of change of direction of movement only one extreme container should be present in radiation zone. Radiation process is interrupted when extreme container acquires half of required fluency, containers change places, each keeping previous orientation in channel. In case of single movement desired result is achieved thanks to movement of container subjected to radiation in given cycle with different speeds found from relationships specified in description of invention. EFFECT: raised factor of use of neutrons. 4 cl, 1 dwg