METHOD OF NEUTRON-TRANSMUTATION DOPING OF SILICON Russian patent published in 1997 - IPC

FIELD: technology of producing semiconductor material for devices in electronics and electrical engineering. SUBSTANCE: invention is meant for use of reactor channels in which it will be impossible to place container with silicon ingots behind zone of irradiation. Given process includes reciprocating motion of container through zone of irradiation through reactor channel and check of average neutron fluency over length of ingots. Neutron field is formed in reactor channel in advance and section where distribution of flux density of thermal neutrons is even function. Silicon ingots with total length not exceeding length of chosen section in channel are placed into container. In process of irradiation container with ingots is moved over channel from extreme position in which center of length of ingots matches center of chosen section. After irradiation with fluency of neutrons equal to half of required value process of irradiation is stopped, container is slewed around shifting positions of its butts and then container is irradiated with remaining fluency of neutrons. EFFECT: higher efficiency. 1 dwg