METHOD OF CHECKING POTENTIALS IN THE BOUNDARIES OF SEMICONDUCTOR HETEROSTRUCTURES Russian patent published in 1994 - IPC

Abstract RU 2009574 C1

FIELD: semiconductor engineering. SUBSTANCE: when checking height of barriers in boundaries of heterostructures, the specimen is placed into capacitor cell and is illuminated by pulsed light and permanent brightening of specific spectral composition. Total photo emf is measured in two barriers of each heterolayer. Sign and value of the barrier are determined from lux-volt characteristic of this photo emf. EFFECT: reliability. 2 dwg, 1 tbl

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RU 2 009 574 C1

Authors

Karpovich I.A.

Tikhov S.V.

Shilova M.V.

Dates

1994-03-15—Published

1991-05-28—Filed