FIELD: power supplies for electronic-optical instruments and space systems. SUBSTANCE: n- region of converter is designed as heavily doped layer of n-type, layer of n-type and variable zone layer of n-type. P-region of converter is designed as variable zone layer of p-type and heavily doped p-type layer. P-n junction uses n and p type layers with dope concentration of $$$. In addition device has lower continuous resistance contact and upper lattice resistance contact. P-n junction and both variable zone layers are designed so that depleted region runs into variable zone layers by 0.10.2 of total depth of layers which shape p-n junction. EFFECT: increased functional capabilities. 2 dwg
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Authors
Dates
1997-05-27—Published
1992-05-12—Filed