FIELD: control systems.
SUBSTANCE: invention can be used to create memory and low power consuming integrated circuits of nonvolatile memory. Essence of the invention consists in that the method of controlling the operation of the membrane-type capacitor structure metal-insulator-semiconductor, in which the dielectric and the semiconductor are connected in series with respect to each other, wherein the dielectric is made from a non-light-sensitive material, and the semiconductor substrate is made from a light-sensitive material containing a dopant in concentrations of 1015÷1017 cm-3, providing commensurability of capacitance or conductivity of dielectric and region of space charge of semiconductor and absence of fixation of Fermi level on interface of dielectric and semiconductor, comprises adjustment of electric field intensity and current value in dielectric during its forming and switching due to change of resistance of semiconductor substrate due to capacitance variation and conductivity of space charge region in semiconductor using high intensity light illumination 1018÷1021 photons/cm2⋅from structures on side of metal electrode and dielectric in area of own photosensitivity of semiconductor lining.
EFFECT: reduction of molding and switching voltages, expansion of resistance limit in low-ohmic and high-resistance states, expansion of spectral operating mode due to semiconductor, reduction of error probability when reading memristor state.
4 cl, 8 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD OF DETERMINING ELECTROPHYSICAL PARAMETERS OF CAPACITOR STRUCTURE OF MEMRISTOR CHARACTERISING MOULDING PROCESS | 2015 |
|
RU2585963C1 |
OPTICALLY CONTROLLED MEMRISTOR BASED ON THE ITO/ZrO(Y)/Si MDS STRUCTURE WITH Ge NANOISLANDS | 2022 |
|
RU2803506C1 |
METHOD FOR REVERSIBLE VOLATILE SWITCHING OF THE RESISTIVE STATE OF A SOLID-STATE APPARATUS BASED ON A METAL-DIELECTRIC-METAL STRUCTURE | 2021 |
|
RU2787740C1 |
METHOD OF IMITATION TESTING INSTRUMENT STRUCTURE RESISTANCE TO IRRADIATION BY FAST NEUTRONS (VERSIONS) | 2016 |
|
RU2638107C1 |
METHOD FOR OBTAINING ACTIVE LAYER OF NON-VOLATILE RESISTIVE MEMORY ELEMENT | 2023 |
|
RU2812881C1 |
METHOD OF FORMING MEMRISTOR BASED ON SOLID-STATE ALLOY Si:Me AND MEMRISTOR STRUCTURE BASED ON SOLID-STATE ALLOY Si:Me | 2012 |
|
RU2540237C2 |
METHOD FOR ELECTRICAL PASSIVATION OF SURFACE OF MONOCRYSTALLINE SILICON | 2014 |
|
RU2562991C2 |
OPTICAL MICROWAVE PULSE GENERATOR | 2009 |
|
RU2390073C1 |
PHOTOSENSITIVE CELL | 1991 |
|
RU2022410C1 |
MEMRISTOR SWITCHING METHOD | 2022 |
|
RU2814564C1 |
Authors
Dates
2019-11-14—Published
2018-12-26—Filed