METHOD OF CONTROLLING OPERATION OF A METAL-INSULATOR-SEMICONDUCTOR MEMBRANE CAPACITOR STRUCTURE Russian patent published in 2019 - IPC H01L21/04 B82B1/00 

FIELD: control systems.

SUBSTANCE: invention can be used to create memory and low power consuming integrated circuits of nonvolatile memory. Essence of the invention consists in that the method of controlling the operation of the membrane-type capacitor structure metal-insulator-semiconductor, in which the dielectric and the semiconductor are connected in series with respect to each other, wherein the dielectric is made from a non-light-sensitive material, and the semiconductor substrate is made from a light-sensitive material containing a dopant in concentrations of 10¹⁵÷10¹⁷ cm^-3, providing commensurability of capacitance or conductivity of dielectric and region of space charge of semiconductor and absence of fixation of Fermi level on interface of dielectric and semiconductor, comprises adjustment of electric field intensity and current value in dielectric during its forming and switching due to change of resistance of semiconductor substrate due to capacitance variation and conductivity of space charge region in semiconductor using high intensity light illumination 10¹⁸÷10²¹ photons/cm²⋅from structures on side of metal electrode and dielectric in area of own photosensitivity of semiconductor lining.

EFFECT: reduction of molding and switching voltages, expansion of resistance limit in low-ohmic and high-resistance states, expansion of spectral operating mode due to semiconductor, reduction of error probability when reading memristor state.

4 cl, 8 dwg