PHOTODIODE NODE FOR MATRIX PHOTODETECTOR Russian patent published in 1997 - IPC

Abstract RU 2080691 C1

FIELD: microelectronics. SUBSTANCE: method for manufacturing involves generation of two photodiodes in active layer of semiconductor. Photodiodes are connected in series through tunnel-transparent structure. Each diode receives half of exposed light. EFFECT: increased functional capabilities. 2 dwg

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RU 2 080 691 C1

Authors

Velichko Aleksandr Andreevich

Dates

1997-05-27—Published

1993-03-31—Filed