PHOTODETECTOR WITH CONTROLLED REDEPLOYMENT OF CHARGE CARRIER DENSITY MAXIMA Russian patent published in 2020 - IPC H01L31/112 

FIELD: optoelectronics.

SUBSTANCE: invention relates to the field of optoelectronics, namely – to high-speed integrated photodetectors based on A^IIIB^V type semiconductor materials. In a photodetector with controlled redistribution of charge carrier density maxima, comprising a semi-insulating substrate, a semiconductor optical radiation absorption region, highly-damped contact regions of n and p conductivity types, connected to them first and second metal electrodes, control p-n junction is introduced, which is formed by lower narrow-bandgap GaAs-region of p-type conductivity and upper wide-bandgap AlGaAs-region of n-type conductivity, high-alloy near-contact subregion of p-type conductivity, first control metal bus, lower LT-GaAsSb and upper LT-InGaAs regions of recombination with low life-time and low mobility of charge carriers, wide-bandgap AlGaAs-region of n-type conductivity, the second control metal bus located above wide-bandgap AlGaAs-region of n-type conductivity and forming with it a Schottky control transition.

EFFECT: faster operation while maintaining high sensitivity.

1 cl, 6 dwg