FIELD: optic engineering.
SUBSTANCE: method can be used for receiving and registering light radiation and for production of IR-red spectrum detectors. Detectors are intended for application in micro and nanometer technological devices. Light flux to be measured is focused onto area of maximal photosensitivity of autoelectronic cathode made of high-resistance semiconductor at the condition of hν1>ΔE, where h is Plank constant, ν1 is frequency of light to be registered, ΔE is forbidden zone width of used semiconductor emitter, to which emitter the negative potential of constant voltage is applied. Value of autoelectronic emission current is measured which current flows in anode circuit. The value of the current is used to judge of intensity of registered light flux. Total surface of autoelectronic cathode is illuminated with intensity constant light within frequency range of ν2, which frequencies meet the condition of hν2>ΔE.
EFFECT: improved sensitivity due to additional illumination of the cathode.
3 dwg
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Authors
Dates
2006-07-27—Published
2004-11-17—Filed