METHOD OF CONTACT-FREE DETERMINING OF CHARACTERISTICS OF SILICON PLATES PROVIDED WITH INTERNAL GETTER Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: method allows to control width of defect-free region in silicon plates o be close to the surface of the plates. Plates with p-type or n-type of conductivity are used. Defect-free region is illuminated by IR-radiation pulses with quantum volume absorption and by pulses of light belonging to visual or to UV-range. Duration of pulses is no more than 30 ns, surface absorption is provided. Registration of dip of photoconductivity curves is carried out after finishing action of each light pulse. Equivalent sections with constant decay time is determined using normalized curves. Time delay is measured between equivalent sections. Width of defect-free region is determined by calculation. EFFECT: improved precision of quality control. 3 dwg, 1 tbl