DESIGN OF SURFACE THZ EMITTER Russian patent published in 2023 - IPC H01L27/15 H01S1/02 H01L31/18 

FIELD: semiconductor materials.

SUBSTANCE: invention relates to semiconductor materials of the A3B5 group, used for the manufacture of surface emitters in the terahertz range (THz) based on a built-in field or the Dember effect, as well as photoconductive antennas (PCAs). A method for manufacturing a material for a surface emitter, including the formation of a photoconductive layer of GaAs epitaxially grown on a GaAs substrate of any crystallographic orientation, while a transition metamorphic buffer is used to match the lattice parameter of the photoconductive layer with the substrate. According to the invention, before forming the photoconductive layer, a metamorphic buffer is grown in the form of a GaAs layer with a thickness of 150-250 nm doped with a fine donor impurity with a concentration of (3-5)x10¹⁸ cm^-3, and a photoconductive layer of GaAs is formed with a thickness of 0.5-1 mcm.

EFFECT: simple and universal design of photoconductive layers, which provides a significant increase in the efficiency of THz generation in the surface emitter mode when operating in transmission and reflection geometry.

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