PROCESS OF MANUFACTURE OF SILICON EPITAXIAL STRUCTURES WITH INTERNAL GETTER Russian patent published in 1995 - IPC

FIELD: semiconductor equipment. SUBSTANCE: substrates with finished chemical and mechanical polishing of working surfaces are manufactured from workstock of monocrystalline silicon based on aeroseal. Ions of carbon in dose of 100-200 μC/сm² with energy of 260-350 keV are implanted into working surface. Then ions of oxygen in dose of 300-400 μC/сm² with energy ensuring coincidence of averaged projected paths of ions of oxygen and carbon are implanted. After implantation plates are cleaned in peroxide-ammonia solution, washed and dried. Later gas pickling in atmosphere of HCl+H₂ is performed to remove layer with thickness of (0,1-0,2)R_p, where R_p is averaged projected path of ions. After this epitaxial film with thickness of 2.5-3.0 μm is grown by chloride method. EFFECT: improves quality of epitaxial structures thanks to increase of homogeneity of distribution of dopant in epitaxial layer and decrease of density of defects of crystalline lattice in it. 1 tbl