POWERFUL SEMICONDUCTOR DEVICE Russian patent published in 1994 - IPC

Abstract RU 2010394 C1

FIELD: semiconductor equipment. SUBSTANCE: powerful semiconductor device is provided with insulating disc element with one-sided metallization and radial groove which carries mounted active and passive elements. EFFECT: simplified design, improved efficiency. 4 dwg

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RU 2 010 394 C1

Authors

Gorokhov L.V.

Matanov A.V.

Potapchuk V.A.

Dates

1994-03-30—Published

1991-07-01—Filed