SEMICONDUCTOR KEY DEVICE WITH FIELD CONTROL Russian patent published in 2003 - IPC

FIELD: semiconductor instrumentation engineering. SUBSTANCE: semiconductor key device with field control has thyristor with electrostatic induction and MOS transistor each including source, drain and gate and voltage adjusting element so interconnected that drain of thyristor with electrostatic induction is connected to first power terminal, source of thyristor is connected to drain of MOS transistor, gate of thyristor is connected via voltage adjusting element to source of MOS transistor which in its turn is connected to second power terminal employed as common bus, gate of MOS transistor is connected to third controlling terminal. Key device is supplemented with capacitor placed between gates of thyristor and transistor. Pulse diode which anode is connected to gate of thyristor and which cathode is connected to common bus is used in the capacity of voltage adjusting element. Thyristor with electrostatic induction, MOS transistor and pulse diode come in the form of separate crystals and are put on common insulation substrate together with capacitor. EFFECT: reduced static and commutation losses of power across key device with simultaneous simplification of manufacturing technology. 2 cl, 4 dwg