METHOD FOR DETERMINING NOISE FACTOR OF FIELD-EFFECT TRANSISTORS AND TRANSISTOR STRUCTURES Russian patent published in 1994 - IPC

FIELD: quality control of transistors. SUBSTANCE: temperature-to-noise dependences are measured at several fixed audio frequencies in linear mode at zero gate voltage and maxima are found on those dependences. Dependences of measurement frequency on temperature corresponding to maxima are found from results obtained and type of deep traps causing audio-frequency noise is found. Transistor quality is estimated by noise factor at working frequency which is determined according to correlation curve of noise factor versus AF noise level in maximum on one of fixed frequencies for particular type of deep traps plotted in advance. EFFECT: improved prediction of noise characteristics at working frequency. 2 cl, 4 dwg