FIELD: method for diagnostics of noise and dynamic parameters of ultra fast action field UHF and EHF transistors.
SUBSTANCE: in accordance to invention, two values of spontaneous optical power of super-luminescent diode are set and measured. Optical radiation of super-luminescent diode is focused into gate-drain area of field transistor. Level of UHF noise at transistor output is measured. Noise coefficient is derived from formula.
EFFECT: expanded range of noise coefficient measurement.
2 dwg
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