PROCESS OF MANUFACTURE OF OXIDE-SEMICONDUCTOR CHIP CAPACITORS Russian patent published in 1994 - IPC

Abstract RU 2013816 C1

FIELD: electronics. SUBSTANCE: sections K with wire leads are soldered to output frame composed of cathode flat lead and flat outer anode lead. End of flat outer anode lead is divided into three parts. Cathode lead of section is soldered to flat cathode lead and wire anode lead is welded to center part of flat outer anode lead. Safety element from fusible metal is set between center part of flat outer anode lead and extreme part. EFFECT: simplified design and miniaturization of structure. 5 dwg

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RU 2 013 816 C1

Authors

Filippov V.A.

Dates

1994-05-30Published

1991-07-24Filed