METHOD OF MAKING SEMICONDUCTOR DEVICES Russian patent published in 2014 - IPC H01L21/78 

FIELD: physics.

SUBSTANCE: invention relates to microelectronics and can be used in manufacturing electronic devices. in the method of making a semiconductor device, via-holes are made in a semiconductor wafer; surfaces of the holes, the formed cleavages, the front and back surface of the semiconductor wafer are selectively coated with an insulating layer; metal conductors needed for burn-in testing and full inspection of all chips are deposited on top of the insulating layer; after burn-in testing and full inspection, the wafer is cut into chips, the non-defective ones of which are used for packaging.

EFFECT: invention provides group burn-in testing and full inspection of chips in a semiconductor wafer, which considerably lowers the cost of manufacturing semiconductor devices.

9 cl, 5 dwg