FIELD: electronics. SUBSTANCE: good semiconductor crystals are mounted on lead-out frames which crystal holders are located under plane of frames. Wire leads are connected to termination pads of crystals and cross-arms of frames. Heat spreading agent is laid into sockets of lower mould for encapsulation, lead-out frames with mounted crystals are installed on them with provision for gap with reference to working plane of lower part of mould. Gap is determined by selection of dimension of height of heat spreading agent, depth of settling of bottom of crystal holder with respect to plane of lead-out frame and depth of socket of lower part of mould so that condition a + b > S is realized where a is height of heat spreading agent, b is depth of settling of bottom of crystal holder, S is depth of socket of lower part of mould. Then lower and upper parts of mould are joined and encapsulation of microcircuits is conducted by pressing with press-compound. Due to realization of specified relationship encapsulation provides for guaranteed contact between heat spreading agent and crystal holder of lead-out frame. This prevents penetration of press-compound between crystal and heat spreading agent which reduces probability of short-circuiting of wire leads to edge of crystal due to skewness of crystal holder, diminishes thermal crystal-case resistance and in the long run increases output of good and reliable microcircuits. EFFECT: increased output of good microcircuits due to reduced probability of shorting of wire leads to edge of semiconductor crystal, enhanced reliability of microcircuits due to reduced thermal crystal-case resistance thanks to prevention of penetration of press-compound between crystal and heat spreading agent. 2 dwg
