PROCESS OF MANUFACTURE OF CHARGE-COUPLED DEVICES Russian patent published in 1994 - IPC

Abstract RU 2014671 C1

FIELD: microelectronics. SUBSTANCE: invention can find use in manufacture of MIS microcircuits. Process involves formation of masking layer on silicon substrate, preliminary heat treatment, formation of elements of device and finishing heat treatment. Cooling after heat treatment is conducted in accordance with preset program. EFFECT: facilitated manufacture.

Similar patents RU2014671C1

Title Year Author Number
PHOTOSENSITIVE CHARGE-COUPLED DEVICE MANUFACTURING PROCESS 1995
  • Khitrova L.N.
  • Evstaf'Ev V.F.
RU2095889C1
PROCESS OF FORMATION OF LAYER OF SILICON CARBIDE ON SILICON SUBSTRATE 1992
  • Gerasimov A.I.
RU2031476C1
MANUFACTURING PROCESS FOR DOUBLE-LEVEL METALLIZED LARGE-SCALE INTEGRATED CIRCUITS 1991
  • Krasnozhon A.I.
  • Frolov V.V.
  • Khvorov L.I.
RU2022407C1
PROCESS OF MANUFACTURE OF MIS LARGE-SCALE INTEGRATED CIRCUITS 1987
  • Achkasov V.N.
  • Vakhtel' V.M.
  • Gitlin V.R.
  • Ivakin A.N.
  • Kadmenskij S.G.
  • Levin M.N.
  • Ostroukhov S.S.
RU1519452C
PROCESS OF MANUFACTURE OF HIGH-VOLTAGE SILICON DEVICES 1988
  • Bachurin V.V.
  • Sadkovskaja E.A.
  • Sopov O.V.
  • Fedorova T.I.
SU1556432A1
PROCESS OF MANUFACTURE OF SEMICONDUCTOR COMPONENTS OF SHF HIGH-POWER TRANSISTOR MICROASSEMBLIES 1991
  • Gaganov V.V.
  • Zhil'Tsov V.I.
  • Pozhidaev A.V.
  • Popova T.S.
RU2017271C1
METHOD OF DECREASING DEFECTIVENESS OF DOUBLE-LAYER DIELECTRIC IN CONDUCTOR-SILICON NITRIDE-SILICON OXIDE- SEMICONDUCTOR STRUCTURE 1983
  • Tjul'Kin V.M.
  • Mal'Tsev A.I.
  • Nagin A.P.
  • Miloshevskij V.A.
  • Chernyshev Ju.R.
SU1108962A1
PROCESS OF MANUFACTURE OF P-CHANNEL MIS LARGE INTEGRATED CIRCUITS 1989
  • Barabanov M.F.
  • Meshcherjakov N.Ja.
RU1644706C
PROCESS OF PREPARATION OF SILICON SUBSTRATES 1996
  • Skupov V.D.
RU2110115C1
METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTORS 1986
  • Vakhtel' V.M.
  • Gitlin V.R.
  • Ivakin A.N.
  • Kadmenskij A.G.
  • Kadmenskij S.G.
  • Mokshin A.N.
  • Ostroukhov S.S.
RU1499614C

RU 2 014 671 C1

Authors

Bulgakov A.G.

Kirienko V.G.

Sanin K.V.

Dates

1994-06-15Published

1991-05-24Filed