PROCESS OF PREPARATION OF SILICON SUBSTRATES Russian patent published in 1998 - IPC

FIELD: microelectronics, manufacture of plates from monocrystalline silicon with gettering layers. SUBSTANCE: surfaces of working and nonworking sides of substrate are worked mechanically and chemically then three-stage annealing is performed at high and low temperatures to form internal gettering layer. Working sides of substrates are irradiated with flux of alpha particles from radionuclide source before second low- temperature stage of annealing. Change of period of crystal lattice in surface layers close to nonworking sides of substrates is recorded and irradiation is discontinued after stabilization of period of lattice. EFFECT: facilitated preparation of plates. 1 tbl