FIELD: electronic engineering. SUBSTANCE: silicon plates carrying photosensitive charge-coupled devices formed on them and containing at least 50% of devices rejected during their serviceability inspection are subjected to annealing in mixture of inert gas and hydrogen with hydrogen content of 30 to 80% at 400-450 C for 10-16 h, cooled down in inert gas, and checked for serviceability again. Mentioned treatment recovers serviceability of devices and provides for 1.5-2 times increase in yield. EFFECT: improved yield due to more effective charge transport in register. 1 tbl
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