PROCESS OF MANUFACTURE OF HIGH-VOLTAGE SILICON DEVICES Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: in process of manufacture of semiconductor devices masking film of silicon oxide is deposited at temperature of 400 C of substrate after formation of p-n junction with elements of edge protection, for instance, with protective diffusion rings in silicon substrate and creation of electrodes with bonding pads. Then surface of substrate is opened above elements of edge protection, film of semi-insulating polysilicon is deposited, contact pads are opened, thermal treatment is conducted at 400-450 C and external leads are connected to contact pads. Prevention of interaction between passivating polysilicon film and metallization corrects effects of increase of resistance of electrodes and ensures enhanced strength of connection of external leads to contact pads. Temperature conditions of process of manufacture of devices prevents melting-through of silicon with aluminium metallization in regions of contacts which enables dimension of elements for device to be reduced. EFFECT: improved electrical characteristics of device, increased output of good devices thanks to prevention of interaction of electrodes with passivating polysilicon film, enhanced strength of connection of external leads to contact pads and increased density of arrangement of devices. 5 dwg